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| FDD8770/FDU8770 N-Channel PowerTrench(R) MOSFET March 2006 FDD8770/FDU8770 N-Channel PowerTrench(R) MOSFET 25V, 35A, 4.0m General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Features Max rDS(on) = 4.0m at VGS = 10V, ID = 35A Max rDS(on) = 5.5m at VGS = 4.5V, ID = 35A Low gate charge: Qg(10) = 52nC(Typ), VGS = 10V Low gate resistance Application Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture RoHS Compliant LE A REE I DF D M ENTATIO LE N MP G D GDS I-PAK (TO-251AA) S Short Lead I-PAK G S MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package Limited) -Continuous (Die Limited) -Pulsed Single Pulse Avalanche Energy Power Dissipation Operating and Storage Temperature (Note 1) (Note 2) Ratings 25 20 35 210 407 113 115 -55 to 175 mJ W C A Units V V Thermal Characteristics RJC RJA RJA Thermal Resistance, Junction to Case TO-252,TO-251 Thermal Resistance, Junction to Ambient TO-252,TO-251 Thermal Resistance, Junction to Ambient TO-252,1in copper pad area 2 1.3 100 52 C/W C/W C/W Package Marking and Ordering Information Device Marking FDD8770 FDU8770 FDU8770 Device FDD8770 FDU8770 FDU8770_F071 Package TO-252AA TO-251AA TO-251AA 1 Reel Size 13'' N/A(Tube) N/A(Tube) Tape Width 12mm N/A N/A Quantity 2500 units 75 units 75 units www.fairchildsemi.com (c)2006 Fairchild Semiconductor Corporation FDD8770/FDU8770 Rev. A FDD8770/FDU8770 N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = 250A, referenced to 25C VDS = 20V, VGS = 0V VGS = 20V TJ = 150C 25 13.6 1 250 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ rDS(on) Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = 250A ID = 250A, referenced to 25C VGS = 10V, ID = 35A Drain to Source On Resistance VGS = 4.5V, ID = 35A VGS = 10V, ID = 35A TJ = 175C 1.2 1.6 -5.9 3.3 4.0 4.8 4.0 5.5 5.9 m 2.5 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 13V, VGS = 0V, f = 1MHz f = 1MHz 2795 685 450 1.5 3720 915 675 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Gate Charge Gate to Drain "Miller"Charge VGS = 0V to 10V VGS = 0V to 5V VDD = 13V ID = 35A Ig = 1.0mA VDD = 13V, ID = 35A VGS = 10V, RGS = 5 10 12 49 25 52 29 8.1 11 20 22 78 40 73 41 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 35A VGS = 0V, IS = 15A IF = 35A, di/dt = 100A/s IF = 35A, di/dt = 100A/s 0.84 0.79 32 25 1.25 1.0 48 38 V ns nC Notes: 1: Pulse time < 300s, Duty cycle = 2%. 2: Starting TJ = 25oC, L = 0.3mH, IAS = 27.5A ,VDD = 23V, VGS = 10V. 2 FDD8770/FDU8770 Rev. A www.fairchildsemi.com FDD8770/FDU8770 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 120 ID, DRAIN CURRENT (A) 4 VGS = 3V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 100 80 60 40 20 0 VGS = 10V VGS = 4.5V VGS = 3.5V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 3 VGS = 3.5V VGS = 3V 2 VGS = 4.5V 1 VGS = 10V 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 4 0 0 20 40 60 80 ID, DRAIN CURRENT(A) 100 120 Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 12 rDS(on), ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -80 ID = 35A VGS = 10V ID = 35A 10 8 6 4 2 2 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX TJ = 175oC TJ = 25oC -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. Normalized On Resistance vs Junction Temperature 120 Figure 4. On-Resistance vs Gate to Source Voltage 100 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 80 60 40 20 0 1.0 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = 0V 10 1 0.1 TJ = -55oC TJ = 175oC TJ = 25oC TJ = 175oC TJ = 25oC TJ = -55oC 0.01 1E-3 0.0 1.5 2.0 2.5 3.0 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDD8770/FDU8770 Rev. A FDD8770/FDU8770 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) 10 8 6 4 2 0 0 VDD = 10V VDD = 13V VDD = 16V 6000 Ciss CAPACITANCE (pF) 1000 Coss Crss f = 1MHz VGS = 0V 10 20 30 40 50 60 100 0.1 1 10 30 Qg, GATE CHARGE(nC) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics 50 Figure 8. Capacitance vs Drain to Source Voltage 250 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) TJ = 25oC 200 150 100 o 10 TJ = 150oC VGS = 10V TJ = 125oC VGS = 4.5V RJC = 1.3 C/W 50 0 25 1 0.01 0.1 1 10 tAV, TIME IN AVALANCHE(ms) 100 300 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 Figure 9. Unclamped Inductive Switching Capability 600 Figure 10. Maximum Continuous Drain Current vs Case Temperature 20000 10000 P(PK), PEAK TRANSIENT POWER (W) 10us VGS = 10V TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 175 - T C ---------------------150 ID, DRAIN CURRENT (A) 100 100us 10 1ms LIMITED BY PACKAGE OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED TC = 25oC 1000 1 10ms DC SINGLE PULSE 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 100 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t, PULSE WIDTH (s) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation 4 FDD8770/FDU8770 Rev. A www.fairchildsemi.com FDD8770/FDU8770 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJC DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 0.01 SINGLE PULSE 1E-3 -5 10 10 -4 10 10 10 t, RECTANGULAR PULSE DURATION(s) -3 -2 -1 10 0 10 1 Figure 13. Transient Thermal Response Curve 5 FDD8770/FDU8770 Rev. A www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST(R) FASTrTM ActiveArrayTM FPSTM BottomlessTM FRFETTM Build it NowTM GlobalOptoisolatorTM CoolFETTM GTOTM CROSSVOLTTM HiSeCTM DOMETM I2CTM EcoSPARKTM i-LoTM E2CMOSTM ImpliedDisconnectTM EnSignaTM IntelliMAXTM FACTTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19 Preliminary No Identification Needed Full Production Obsolete Not In Production |
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